JPH0574940B2 - - Google Patents

Info

Publication number
JPH0574940B2
JPH0574940B2 JP60015874A JP1587485A JPH0574940B2 JP H0574940 B2 JPH0574940 B2 JP H0574940B2 JP 60015874 A JP60015874 A JP 60015874A JP 1587485 A JP1587485 A JP 1587485A JP H0574940 B2 JPH0574940 B2 JP H0574940B2
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
insulating film
upper electrode
conductive layer
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60015874A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61174744A (ja
Inventor
Tokujiro Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP60015874A priority Critical patent/JPS61174744A/ja
Priority to US06/823,609 priority patent/US4737838A/en
Priority to DE8686101236T priority patent/DE3685969T2/de
Priority to EP86101236A priority patent/EP0192989B1/en
Publication of JPS61174744A publication Critical patent/JPS61174744A/ja
Publication of JPH0574940B2 publication Critical patent/JPH0574940B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP60015874A 1985-01-30 1985-01-30 集積回路装置およびその製造方法 Granted JPS61174744A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60015874A JPS61174744A (ja) 1985-01-30 1985-01-30 集積回路装置およびその製造方法
US06/823,609 US4737838A (en) 1985-01-30 1986-01-29 Capacitor built-in semiconductor integrated circuit and process of fabrication thereof
DE8686101236T DE3685969T2 (de) 1985-01-30 1986-01-30 Integrierte schaltung mit halbleiterkondensator und verfahren zu ihrer herstellung.
EP86101236A EP0192989B1 (en) 1985-01-30 1986-01-30 Integrated circuit with a semiconductor capacitor and process for its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60015874A JPS61174744A (ja) 1985-01-30 1985-01-30 集積回路装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS61174744A JPS61174744A (ja) 1986-08-06
JPH0574940B2 true JPH0574940B2 (en]) 1993-10-19

Family

ID=11900937

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60015874A Granted JPS61174744A (ja) 1985-01-30 1985-01-30 集積回路装置およびその製造方法

Country Status (4)

Country Link
US (1) US4737838A (en])
EP (1) EP0192989B1 (en])
JP (1) JPS61174744A (en])
DE (1) DE3685969T2 (en])

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4638400A (en) * 1985-10-24 1987-01-20 General Electric Company Refractory metal capacitor structures, particularly for analog integrated circuit devices
ATE87766T1 (de) * 1986-11-18 1993-04-15 Siemens Ag Integrierte halbleiterschaltung mit als duennschichtstege auf den die aktiven transistorbereiche trennenden feldoxidbereichen angeordneten lastwiderstaende und verfahren zu ihrer herstellung.
JPS63158869A (ja) * 1986-12-23 1988-07-01 Oki Electric Ind Co Ltd 半導体メモリ装置
US5210599A (en) * 1988-09-30 1993-05-11 Fujitsu Limited Semiconductor device having a built-in capacitor and manufacturing method thereof
US5281835A (en) * 1989-06-14 1994-01-25 Fujitsu Limited Semi-custom integrated circuit device
US5047826A (en) * 1989-06-30 1991-09-10 Texas Instruments Incorporated Gigaohm load resistor for BICMOS process
US5457062A (en) * 1989-06-30 1995-10-10 Texas Instruments Incorporated Method for forming gigaohm load for BiCMOS process
JPH03142934A (ja) * 1989-10-30 1991-06-18 Mitsubishi Electric Corp 半導体集積回路装置の配線接続構造
JP2799028B2 (ja) * 1990-02-07 1998-09-17 株式会社東芝 キャパシタ―を備えた半導体装置
JPH04212426A (ja) * 1990-06-21 1992-08-04 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5219787A (en) * 1990-07-23 1993-06-15 Microelectronics And Computer Technology Corporation Trenching techniques for forming channels, vias and components in substrates
EP0574275B1 (en) * 1992-06-12 1998-04-15 Matsushita Electronics Corporation Semiconductor device having capacitor
JP2874550B2 (ja) * 1994-04-21 1999-03-24 日本電気株式会社 半導体集積回路装置
JPH08330511A (ja) * 1995-05-29 1996-12-13 Yamaha Corp 半導体装置とその製造方法
JP3246274B2 (ja) * 1995-06-22 2002-01-15 松下電器産業株式会社 半導体装置
US5858254A (en) * 1997-01-28 1999-01-12 International Business Machines Corporation Multilayered circuitized substrate and method of fabrication
US5946567A (en) * 1998-03-20 1999-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits
FR2953640B1 (fr) * 2009-12-04 2012-02-10 S O I Tec Silicon On Insulator Tech Procede de fabrication d'une structure de type semi-conducteur sur isolant, a pertes electriques diminuees et structure correspondante

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5839380B2 (ja) * 1977-02-28 1983-08-30 沖電気工業株式会社 半導体集積回路装置
US4285001A (en) * 1978-12-26 1981-08-18 Board Of Trustees Of Leland Stanford Jr. University Monolithic distributed resistor-capacitor device and circuit utilizing polycrystalline semiconductor material
US4324588A (en) * 1979-08-17 1982-04-13 Engelhard Corporation Arc erosion resistant composite materials and processes for their manufacture
DE3032632A1 (de) * 1980-08-29 1982-04-08 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung integrierter dynamischer ram-eintransistor-speicherzellen
US4441249A (en) * 1982-05-26 1984-04-10 Bell Telephone Laboratories, Incorporated Semiconductor integrated circuit capacitor
US4419812A (en) * 1982-08-23 1983-12-13 Ncr Corporation Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor
JPS5947474A (ja) * 1982-09-10 1984-03-17 カネボウ株式会社 導電性短繊維
JPS60211866A (ja) * 1984-04-05 1985-10-24 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
EP0192989A2 (en) 1986-09-03
JPS61174744A (ja) 1986-08-06
EP0192989B1 (en) 1992-07-15
DE3685969T2 (de) 1993-03-04
US4737838A (en) 1988-04-12
DE3685969D1 (de) 1992-08-20
EP0192989A3 (en) 1988-01-13

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term